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Keywords: Sr Device & Process Engineer of GaN, Location: San Jose, CA

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Sr Device & Process Engineer of GaN

epitaxy, GaN HEMT, or GaAs pHEMT/HBT Good understanding of high band gap GaN or GaAs device physics and fabrication process... Good understanding of device reliability issues in III-V devices Good understanding of GaN or GaAs epitaxy growth process...

Location: San Jose, CA
Posted Date: 13 Aug 2024
Salary: $96500 - 145000 per year

Sr Device & Process Engineer

, or GaAs pHEMT/HBT Good understanding of high band gap GaN or GaAs device physics and fabrication process Good understanding... of device reliability issues in III-V devices Good understanding of GaN or GaAs epitaxy growth process TCAD simulation of high...

Location: San Jose, CA
Posted Date: 08 Sep 2024
Salary: $96500 - 145000 per year

Sr Device and Process Engineer

, or GaAs pHEMT/HBT Good understanding of high band gap GaN or GaAs device physics and fabrication process Good understanding... of device reliability issues in III-V devices Good understanding of GaN or GaAs epitaxy growth process TCAD simulation of high...

Location: San Jose, CA
Posted Date: 08 Sep 2024
Salary: $96500 - 145000 per year

Sr Device & Process Engineer

epitaxy, GaN HEMT, or GaAs pHEMT/HBT Good understanding of high band gap GaN or GaAs device physics and fabrication process... Good understanding of device reliability issues in III-V devices Good understanding of GaN or GaAs epitaxy growth process...

Location: San Jose, CA
Posted Date: 13 Aug 2024
Salary: $96500 - 145000 per year

Sr Device and Process Engineer

epitaxy, GaN HEMT, or GaAs pHEMT/HBT Good understanding of high band gap GaN or GaAs device physics and fabrication process... Good understanding of device reliability issues in III-V devices Good understanding of GaN or GaAs epitaxy growth process...

Location: San Jose, CA
Posted Date: 13 Aug 2024
Salary: $96500 - 145000 per year